发明名称 Method of etching an object, method of repairing pattern, nitride pattern and semiconductor device
摘要 A method of manufacturing a compound layer, containing a nitrified metal as a major component thereof and having a predetermined microstructure pattern, includes: an ion implantation step for implanting hydrogen ions into a predetermined region of a compound layer formed on a substrate to form an implanted region; and an etching step for selectively etching the implanted region by using a gas containing at least oxygen, to remove the implanted region of the compound layer while maintaining the other region as a microstructure pattern. By introducing a halogen element like fluorine in addition to hydrogen, fabrication of the pattern can be executed more reliably and more easily. As a result, volatility of reaction products produced upon etching the compound layer is enhanced, and micro-loading effects are suppressed. Thus, there are provided a method of fabricating a pattern of a compound layer capable of improving the CD controllability without using a dummy pattern, for example, and a compound layer having a microstructure pattern.
申请公布号 US2003146485(A1) 申请公布日期 2003.08.07
申请号 US20030342361 申请日期 2003.01.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 EZAKI MIZUNORI
分类号 G03F1/16;C23C14/48;G03F1/00;G03F1/20;G03F1/22;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;H01L33/00;H01L33/32;(IPC1-7):H01G9/00 主分类号 G03F1/16
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