发明名称 TANDEM THIN-FILM PHOTOELECTRIC TRANSDUCER AND ITS MANUFACTURING METHOD
摘要 <p>A tandem thin-film photoelectric transducer comprises a transparent insulating base (1), a transparent electrode (2), photoelectric transducing units (11, 12), and a back electrode (13). The electrodes and units are all deposited in this order over the base (1). An intermediate layer (3) partially reflecting and transmitting light is interposed at least at one interface between the photoelectric transuding units (11, 12). The intermediate layer (3) has an average thickness in the range from 10 to 90 nm. The top surface of the intermediate layer (3) includes an uneven surface having an average unevenness pitch in the range from 10 to 50 nm.</p>
申请公布号 WO2003065462(P1) 申请公布日期 2003.08.07
申请号 JP2003000753 申请日期 2003.01.27
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