Method for forming a cavity in a monocrystalline silicon substrate and semiconductor device with a cavity in a monocrystalline silicon substrate with an epitaxial cover layer

摘要

A semiconductor component having a cavity is produced by: (i) forming a cavity in a monocrystalline silicon substrate (1), and covering walls of the cavity with a cover layer at least in an upper end region of the cavity; (ii) depositing a covering layer on the silicon substrate with a selective epitaxial process; and (iiii) growing the covering layer only on the silicon surface. Production of a semiconductor component having a cavity comprises: (a) providing a monocrystalline silicon substrate having a silicon surface; (b) forming a cavity in the silicon substrate and covering walls of the cavity, with a cover layer at least in an upper end region of the cavity; (c) depositing a covering layer on the silicon substrate with a selective epitaxial process; and (d) growing the covering layer only on the silicon surface to cover the cavity with the covering layer, and to form a covered cavity in the monocrystalline silicon substrate.