| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a single crystal in which contaminants such as carbon and heavy metals permeate in a small amount and to a shallow depth. SOLUTION: The apparatus 1 for producing a single crystal comprises a crucible 2 for containing a raw melt 4 of the single crystal 7 to be grown, a heater 3 for heating the melt 4, a pull-up means 5 for bringing a seed crystal 6 into contact with the surface of the melt 4 in the crucible 2 to grow the single crystal 7, a radiant heat shielding screen 8 having a tapered surface 8a surrounding the periphery of a pull-up area for the single crystal 7, a chamber 9 for containing each of the members, and a means for supplying inert gas from the upper part of the chamber 9. A flow path of the inert gas is divided at the upper part of the radiant heat shielding screen 8 into a first flow path into the tapered surface 8a and a second flow path along the outer periphery of the radiant heat shielding screen 8. COPYRIGHT: (C)2003,JPO
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