发明名称 |
Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structure |
摘要 |
Within both a method for fabricating a bipolar transistor device and a method for fabricating a BiCMOS device there is: (1) formed contacting a base contact region a polysilicon base contact of a second polarity; and (2) formed contacting an emitter contact region a polysilicon emitter contact of a first polarity. Within the methods, there is then implanted into the polysilicon base contact a dose of a dopant of the second polarity while masking the polysilicon emitter contact. The methods provide for enhanced performance of the bipolar transistor device and the BiCMOS device.
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申请公布号 |
US6602747(B1) |
申请公布日期 |
2003.08.05 |
申请号 |
US20020180275 |
申请日期 |
2002.06.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
YANG FU-CHIH;SHEN GUAN-JIE;SHIEH YUNG-YEN |
分类号 |
H01L21/8249;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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