发明名称 Pulse voltage breakdown (VBD) technique for inline gate oxide reliability monitoring
摘要 Disclosed is a method of testing a dielectric, comprising setting a reference current below a breakdown current of the dielectric, applying a stress voltage to the dielectric below a breakdown voltage of the dielectric and measuring a stress current resulting therefrom, incrementally increasing said stress voltage until said measured stress current exceeds said reference current.
申请公布号 US6602729(B2) 申请公布日期 2003.08.05
申请号 US20010905386 申请日期 2001.07.13
申请人 INFINEON TECHNOLOGIES AG 发明人 LIN CHAUN
分类号 G01N27/92;H01L21/66;H01L23/544;(IPC1-7):H01L21/66;G01R31/01 主分类号 G01N27/92
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