| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture, at a low cost and stably, a thin-film semiconductor device having proper transistor characteristics. SOLUTION: A channel-part silicon film is deposited by an LPCVD method, and then the temperature is decreased in a reducing atmosphere. Temperature decrease is made in an auxiliary chamber. Thus, the thin-film semiconductor device with satisfactory characteristics can be manufactured at a low cost and stably.</p> |
