发明名称 Resist material and method for forming a resist pattern with the resist material
摘要 A resist material is made of a polymer or copolymer having a cyclic hydrocarbon as a skeletal structure and an alkali-soluble group to which a protective group is attached as a side chain. Because of the protective group, the resist material is insoluble in alkali solution. In addition, an acid generating agent is added to the resist material. When the acid generating agent is irradiated with a radiation ray, an acid is generated from the acid generating agent, and the protective group is detached from the alkali-soluble group by the function of the acid. Therefore, a resist film made of the resist material can be formed in a desired pattern by irradiating the resist film with the radiation ray. Also, because the cyclic hydrocarbon is used as the skeletal structure of the polymer or copolymer, a superior dry-etching resistance is obtained as compared with a conventional resist material in which acrylate resin is used as a skeletal structure, so that there is no probability that a patterned resist film is over-etched or deformed even though the patterned resist film is used as a mask in an etching process.
申请公布号 US2003143483(A1) 申请公布日期 2003.07.31
申请号 US20020326414 申请日期 2002.12.23
申请人 FUJITSU LIMITED 发明人 TAKECHI SATOSHI
分类号 G03F7/004;G03F7/039;G03F7/32;G03F7/38;H01L21/027;(IPC1-7):G03F7/004 主分类号 G03F7/004
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