| 摘要 |
The invention relates to an integrated circuit arrangement on the basis of III/V semiconductors, which comprises at least one active component (2) and a multilayer arrangement of wiring planes. A metallized layer comprising a metal contact (4) of the at least one active component (2) is configured as one of the lower wiring planes. In this manner, metallized layers that are conventionally only used for providing the metal contacts of the components, can be integrated into the wiring of the integrated circuit arrangement. |
