| 摘要 |
<p>A honeycomb structure (1) which is partitioned by a partition wall (2) and has a large number of communicating holes (3) passing through in the X axis direction, characterized in that it comprises a Si phase controlled to have a lattice constant of 0.54302 to 0.54311 at room temperature; a method for manufacturing a honeycomb structure which comprises a firing step of firing a precursor of the honeycomb structure; a method for manufacturing a honeycomb structure which comprises using a precursor containing a Si phase and performing the firing step by the use of a ceramic material free of a boron-containing compound; a method for manufacturing a honeycomb structure which comprises suppressing the percentage of the reduction in the Si content of the Si phase between the Si phase prior to the firing step and that after the firing step to 10 mass % or less. The above honeycomb structure has improved thermal conductivity, which leads to the manufacture of the structure excellent in the resistance to heat shock.</p> |
