METHOD OF CHANGING CHARACTERISTIC OF SWITCHING MAGNETIC FIELD OF MAGNETIC TUNNEL JUNCTION

摘要

PROBLEM TO BE SOLVED: To provide a means that can realize a memory device having higher characteristics than those that the conventional memory device has by suppressing the fluctuation of the magnetic characteristic of the device. SOLUTION: A magnetic tunnel junction is manufactured by forming a pinned layer and a sense layer (206 and 210) and resetting the magnetization vector of at least one of the layers (220). COPYRIGHT: (C)2003,JPO