| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including an SRAM, which has a structure where holding data is not easily destroyed due to anαbeam software error. SOLUTION: The semiconductor device includes a memory cell region 100 including the SRAM, a peripheral circuit region 200 including the peripheral circuit of the SRAM and a dummy cell region 300 positioned between the memory cell region and the peripheral circuit region on the same silicon substrate 40. The silicon substrate 40 has a first conductive type (p-type). The memory cell region 100 and the dummy cell region 300 include a first conductive (p-type) first well 42, a second conductive (n-type) second well 44 and a second conductive embedded layer 50. The embedded layer 50 is positioned at least below the first well 42 in contact with the first well, and formed such that the end 50a on the side of the peripheral circuit region 200 is positioned in the dummy cell region 300. COPYRIGHT: (C)2003,JPO
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