| 摘要 |
<p>A wafer having heterostructure therein is formed using a substrate (60 of Figure 14) with recesses (61 of Figure 14) formed within a dielectric layer. A magnetized magnetic layer or a polarized electret material (61 of Figure 14) is formed at the bottom of each recess (61 of Figure 14). The magnetic layer (61 of Figure 14) or a polarized electret material (61 of Figure 14) provides a predetermined magnetic or electrical field pattern. A plurality of heterostructures (50 of Figure 14) is formed from on an epitaxial wafer wherein each heterostructure has formed thereon a non-magnetized magnetic layer (55 of Figure 14) that is attracted to the magnetized magnetic layer formed at the bottom of each recess or dielectric layer (55 of Figure 14) that is attracted to the polarized electret material formed at the bottom of each recess. The plurality of heterostructures is etched from the epitaxial wafer to from a plurality of heterostructure pills. The plurality of heterostructure pills is slurried over the surface of the dielectric layer so that individual heterostructure pills can fall into a recess and be retained therein due to the strong short-range magnetic or electrical attractive force between the magnetized magnetic layer in the recess and the non-magnetized magnetic layer on the heterostructure pill or between the polarized electret material in the recess and the dielectric on the heterostructure pill. Any excess heterostructure pills that are not retained in a recess formed within the dielectric layer are removed and an overcoat is applied to form a substantial planar surface.</p> |
