BORON PHOSPHIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND ITS MANUFACTURING METHOD AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide a boron phosphide semiconductor element equipped with a reflecting mirror in simple structure which can efficiently reflect emitted light to an external visual field.

SOLUTION: A 1st barrier layer which is arranged between an Si single- crystal substrate and a light emission layer made of a group III nitride semiconductor containing nitride is formed of a single boron phosphide group III-V compound semiconductor layer which has the same conductivity type with the Si single-crystal substrate and has its layer thickness so adjusted as to have a ≥30% reflection factor to the light emitted by the light emission layer.

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