发明名称 |
Method of forming a bottle-shaped trench in a semiconductor substrate |
摘要 |
A method of forming a bottle-shaped trench for capacitor in a semiconductor substrate. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. Then, an oxide film is formed on the top portion of the trench. Next, a rugged polysilicon layer is formed on the bottom portion and the top portion of the trench. The rugged polysilicon layer and the semiconductor substrate are etched through the bottom portion of the trench by diluted ammonia solution as the etchant to form a bottle-shaped trench having a rugged surface. Next, the oxide film is removed.
|
申请公布号 |
US2003143802(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20020254786 |
申请日期 |
2002.09.24 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHEN YI-NAN;HUANG TUNG-WANG;HO HSIN-JUNG;LIU HSIEN-WEN |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/824;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|