ARTICLE COMPRISING AN OXIDE LAYER ON A GAAS-BASED SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING SAME

摘要

A compound semiconductor structure comprises a first layer 8 of gallium oxide located on a supporting semiconductor structure 7 to form an interface therewith. A second layer 9 of a Ga-Gd oxide is disposed on the first layer. The GaAs-based supporting semiconductor structure may be a GaAs-based heterostructure such as an at least partially completed semiconductor device e.g., a metal-oxide field effect transistor 430, a heterojunction bipolar transistor 310, or a semiconductor laser. In this manner a dielectric layer structure is provided which has both a low defect density at the oxide-GaAs interface and a low oxide leakage current density because the dielectric structure is formed from a layer of Ga2O3 followed by a layer of Ga-Gd-oxide. The Ga2O3 layer is used to form a high quality interface with the GaAs-based supporting semiconductor structure while the Ga-Gd-oxide provides a low oxide leakage current density.