| 发明名称 |
CVD DEPOSITION OF M-SiO GATE DIELECTRIC |
| 摘要 |
PROBLEM TO BE SOLVED: To form a highly dielectric gate dielectric having no boundary oxide. SOLUTION: An M-SiN or M-SiON CVD such as HfSiO<SB>2</SB>is used to form a highly dielectric gate dielectric film (106). Post-deposition annealing is used to adjust the concentration of nitrogen. COPYRIGHT: (C)2003,JPO
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| 申请公布号 |
JP2003218108(A) |
申请公布日期 |
2003.07.31 |
| 申请号 |
JP20020361573 |
申请日期 |
2002.12.13 |
| 申请人 |
TEXAS INSTRUMENTS INC |
发明人 |
COLOMBO LUIGI;VISOKAY MARK R;BEVAN MALCOLM J;ROTONDARO ANTONIO L P |
| 分类号 |
H01L21/318;C23C16/30;C23C16/56;H01L21/28;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L21/318 |
主分类号 |
H01L21/318 |
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