发明名称 |
DAMASCENE COPPER ELECTROPLATING PROCESS WITH LOW-PRESSURE PRE-PROCESSING |
摘要 |
A damascene copper electroplating process with low-pressure pre-processing for fabricating interconnect structures on wafers comprising the following steps: a. closing two control valves to stop circulation of a plating solution; b. conveying a wafer to be plated on a predetermined location in a hallow container; c. venting the hallow container until the pressure inside the hallow container reaching a pre-determined low pressure and then dipping the wafer into the plating solution; d. introducing external air until the pressure inside the hallow container reaching standard value; e. opening the two control valves to re-circulate the plating solution; f. repeating steps a to e for next wafer. The new process can reduce void defects and gap defects on wafers.
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申请公布号 |
US2003143842(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20020057960 |
申请日期 |
2002.01.29 |
申请人 |
YEH TSUNG-KUANG |
发明人 |
YEH TSUNG-KUANG |
分类号 |
C25D5/00;C25D7/12;H01L21/288;H01L21/768;(IPC1-7):H01L21/44;C22F1/08 |
主分类号 |
C25D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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