| 摘要 |
<p>A method passivates a surface of a semiconductor structure. The method provides III-V semiconductor material having a surface to be passivated. Upon the surface of the III-V semiconductor material (1 of Figure 2) to be passivated an oxide layer (3 of Figure 2) is formed. Thereafter, the surface of the III-V semiconductor material having the oxide layer is passivated, without desorption of the oxide layer and in a vacuum of 2x10-6 Torr, with a material (5 and 7 of Figure 2) having the ability to intermix with the oxide layer so as to exchange oxygen, passivation layer material, and III-V semiconductor material therebetween to form graded layers of oxidized III-V and passivation material.</p> |
