| 摘要 |
PROBLEM TO BE SOLVED: To improve the conductance ratio of a driver transistor and an access transistor in an SRAM. SOLUTION: An element separation insulating film 1 and a P-type active region 2 regulated by the film are formed on a semiconductor substrate 10. A dummy gate electrode 20 is formed with the gate electrode 3 of the access transistor and the gate electrodes 4a and 4b of the drive transistor. The dummy gate 20 is formed to cover a part of the active region 2 in regions 8 where N-type dopant injection for forming N+ source drain regions 9 are performed. Thus, the N+ source drain regions 9 are not formed below the dummy gate electrode 20 and the widths of the N+ source drain regions 9 become narrow and the conductance of the access transistor drops. Namely, the conductance ratio of the driver transistor to the access transistor improves. COPYRIGHT: (C)2003,JPO
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