| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor FET which can easily grasp, deduce and adjust environment resistance by using the fact that the environment resistance of the FET fluctuates when the stress of an insulating film formed in the FET fluctuates. SOLUTION: An FET group for capacity test 2, which is constituted of two FETs 3a and 3b having gate electrodes 7a and 7b different in longitudinal directions, is formed on a semiconductor wafer with the FET which is originally manufactured. The capacity of another FET is deduced by grasping a pinch-off voltage difference between FETs 3a and 3b, and the stress of the insulating film formed in a subsequent process is adjusted. Thus, satisfactory environment resistance is obtained. COPYRIGHT: (C)2003,JPO
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