| 摘要 |
<p>The invention described herein relates to new titanium-comprising materials which can be utilized for forming titanium alloy barrier layers for Cu applications. Titanium alloy sputtering targets can be reactively sputtered in a nitrogen-comprising sputtering gas atmosphere to from titanium alloy nitride film, or alternatively in a nitrogen-comprising and oxygen-comprising atmosphere to form titanium alloy oxygen nitrogen thin film. The thin films formed in accordance with the present invention can contain a non-columnar grain structure, low electrical resistivity, high chemical stability, and barrier layer properties comparable or exceeding those of TaN.</p> |
