| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase a speed at a low voltage operation in a semiconductor device on which a non-volatile memory unit and a variable logic unit are mounted. <P>SOLUTION: The semiconductor device has a non-volatile memory unit (8) having a rewritable non-volatile memory cell, and a variable logic unit (3) of which the logic function can be decided in accordance with logical configuration definition data loaded into a plurality of memory cells. The non-volatile memory cell has characteristics in which the gate dielectric strength of a select MOS transistor is lowered below that of a memory MOS transistor, or the gate insulating film of the select MOS transistor is thinner in width than that of a high voltage MOS transistor (a fourth MOS transistor) based on a split gate structure constructed with the select MOS transistor (a second MOS type transistor) and the memory MOS transistor (a first MOS type transistor). The select MOS transistor Gm can be increased in performance and a read current can sufficiently be obtained. <P>COPYRIGHT: (C)2003,JPO</p> |
