| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be manufactured through a high-productivity process and, at the same time, can be reduced in gate-drain parasitic capacitance, can be suppressed in gate length fluctuation, and has an extremely short gate length, and to provide a method of manufacturing the device. SOLUTION: This semiconductor device is provided with a channel region 11 formed on the surface of a substrate 10, a first insulating layer pattern 21 formed on the substrate 10 so that at least one side of its side walls may be arranged on the channel region 11, and a second insulating layer pattern 31 which is composed of a material different from that of the first insulating layer pattern 21 and formed by removing an insulating layer covering the side wall 21a of the pattern 21 arranged on the channel region 11 from an insulating layer formed on the substrate 10 to cover the pattern 21. This device is also provided with a gate electrode 51 formed in the area from which the insulating layer is removed. COPYRIGHT: (C)2003,JPO
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