EEPROM with a neutralized doping at tunnel window edge

摘要

An improved method for fabricating a tunnel oxide window for use in an EEPROM memory cell is provided so as to produce better programming endurance. P-type lightly-doped drain regions are located at the polysilicon edges of the tunnel window. During the programming operation, the P-type lightly-doped drain regions are in contacting with the polysilicon edges. As a result, there is reduced or suppressed the tunneling current to the program junction region so as to improve the efficiency of programming.