发明名称 Circuit for reading memory elements
摘要 A system and method for reading memory elements (e.g., PROMs). The system includes memory elements, a write circuit, and a read circuit. The write circuit is configured to store a charge on one of the memory elements representing a data value. The read circuit is configured to continually detect the charge stored on the memory element and to continually translate the charge into a logic value indicative of the data value when the system is powered on. The read circuit includes a current steering circuit and a detection and translation circuit. The current steering circuit may include a current source coupled to a differential pair, which direct the flow of a current through the memory system based on the stored charge. The detection and translation circuit may include three mirrors, which are configured to detect the current and output the logic value at one of two rails.
申请公布号 US6600678(B1) 申请公布日期 2003.07.29
申请号 US20010020340 申请日期 2001.12.11
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 LORENZ PERRY SCOTT
分类号 G11C7/06;G11C7/10;G11C16/04;G11C16/28;(IPC1-7):G11C7/00 主分类号 G11C7/06
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