发明名称 |
Method for compensating exposure value for exposure process in semiconductor manufacturing system |
摘要 |
A method of determining an exposure value for exposing a resist film, comprises the steps of: estimating a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent sequential exposure and development processes; and compensating a reference exposure value based on said size variation to obtain a compensated exposure value.
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申请公布号 |
US6599670(B2) |
申请公布日期 |
2003.07.29 |
申请号 |
US20010866617 |
申请日期 |
2001.05.30 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
IKUNO MASAO;KISHI MASAHIKO;YOMO MASAAKI |
分类号 |
G03F7/26;G03F7/20;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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