发明名称 Method for compensating exposure value for exposure process in semiconductor manufacturing system
摘要 A method of determining an exposure value for exposing a resist film, comprises the steps of: estimating a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent sequential exposure and development processes; and compensating a reference exposure value based on said size variation to obtain a compensated exposure value.
申请公布号 US6599670(B2) 申请公布日期 2003.07.29
申请号 US20010866617 申请日期 2001.05.30
申请人 NEC ELECTRONICS CORPORATION 发明人 IKUNO MASAO;KISHI MASAHIKO;YOMO MASAAKI
分类号 G03F7/26;G03F7/20;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F7/26
代理机构 代理人
主权项
地址