发明名称 |
Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe |
摘要 |
A suppression layer is formed on a SiC substrate in accordance with a CVD method which alternately repeats the step of epitaxially growing an undoped layer which is a SiC layer into which an impurity is not introduced and the step of epitaxially growing an impurity doped layer which is a SiC layer into which nitrogen is introduced pulsatively. A sharp concentration profile of nitrogen in the suppression layer prevents the extension of micropipes. A semiconductor device properly using the high breakdown voltage and high-temperature operability of SiC can be formed by depositing SiC layers forming an active region on the suppression layer.
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申请公布号 |
US6600203(B2) |
申请公布日期 |
2003.07.29 |
申请号 |
US20020127126 |
申请日期 |
2002.04.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAKAHASHI KUNIMASA;YOKOGAWA TOSHIYA;KITABATAKE MAKOTO;UCHIDA MASAO;KUSUMOTO OSAMU;YAMASHITA KENYA |
分类号 |
H01L21/28;C30B25/02;H01L21/20;H01L21/205;H01L21/336;H01L21/338;H01L29/12;H01L29/16;H01L29/47;H01L29/78;H01L29/812;H01L29/872;(IPC1-7):H01L31/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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