发明名称 METHOD AND DEVICE FOR TREATING SEMICONDUCTOR SUBSTRATES
摘要 This invention relates to a method and apparatus for treating semiconductor substrate. It especially relates to the uncoated semiconductor substrate that is fed to the treating equipment through a carrier gateway (1). The carrier gateway (1) adjoins a transfer chamber (2). Plural treating chambers (3, 4, 5) can be charged with the semiconductor substrate treated from the transfer chamber by first evacuating the transfer chamber (2) and the treating chamber (3) and then opening the connecting door (7) between the transfer chamber (2) and the treating chamber (3). The aim of the invention is that it improves the performance of this system, at least one of the treating chambers (4) is operated at a low pressure or atmospheric pressure and the transfer chamber (2) is flooded with an inert gas before the connecting door (8) associated with the treating chamber (4) is opened. Eventually, it maintains a predetermined pressure difference between the transfer chamber and the treating chamber.
申请公布号 KR20030063413(A) 申请公布日期 2003.07.28
申请号 KR20037007747 申请日期 2003.06.10
申请人 发明人
分类号 H01L21/68;C23C16/44;C23C16/54;H01L21/00 主分类号 H01L21/68
代理机构 代理人
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