MEASURING METHOD OF ALIGNING ACCURACY OF PATTERN, FORMING METHOD OF PATTERN, MANUFACTURING METHOD OF ELECTRO-OPTICAL DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a forming method of a pattern with excellent aligning accuracy, in a manufacturing process of an electro-optical device or a semiconductor device.

SOLUTION: The deviation of the center of a lower layer aligning mark with the center of an upper layer aligning mark is measured, and when the deviation is within an allowable limit, the work of a next process is effected. On the other hand, when the deviation exceeds the allowable limit, the aligning mark on the upper layer and an actual pattern are removed, and, thereafter, aligning with the lower layer is performed again to form the aligning mark of the upper layer and the actual pattern, and the measurement of the deviation of the center of the lower layer aligning mark with the upper layer aligning mark is repeated until the deviation becomes within the allowable limit.

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