发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which can lower the exchange frequency of a covering plate (for example, a shield- ring) and improve the productivity of wafer treatment. SOLUTION: A wafer 5 is disposed on a first region of a shield-ring 6 by supporting the wafer 5 by a projecting object 6A on the first region of the shield-ring 6 or the like, and make the surface on a second region that is an external region of the first region of the shield-ring 6 which is used when forming a film 12 on the wafer 5 lower than the surface of the first region. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003209068(A) 申请公布日期 2003.07.25
申请号 JP20020004419 申请日期 2002.01.11
申请人 HITACHI LTD 发明人 HANAWA KIYOHITO
分类号 C23C14/34;H01L21/285;(IPC1-7):H01L21/285 主分类号 C23C14/34
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