| 摘要 |
PROBLEM TO BE SOLVED: To provide a means in which data is written surely in a memory cell of a memory cell array, while data stored in other memory cell in the memory cell array can be protected. SOLUTION: A magnetoresistive access memory (MRAM) cell array device which can realize a resistive intersection memory (RXPtM) device comprises a chip (i.e., substrate) in which an array of the MRAM cells is formed. Preferably, a controller performing set-up algorithm is formed on the same chip, mostly preferably, this set-up program decides a writing current (some times, a writing current is plural) used when binary data bits are written in a memory cell array, simultaneously, a writing current holding data previously written in the other memory cell of the array. COPYRIGHT: (C)2003,JPO
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