发明名称 |
ADVANCED PROCESS CONTROL (APC) OF COPPER THICKNESS FOR CHEMICAL MECHANICAL PLANARIZATION(CMP) OPTIMIZATION |
摘要 |
A method is provided that comprises forming a copper seed layer (335) on a workpiece (300) and measuring the uniformity of the copper seed layer (335) on the workpiece (300). The method further comprises applying the uniformity measurement to modify processing to form a copper layer (425) having a desired uniformity profile for increased planarization in subsequent planarizing. |
申请公布号 |
WO03060990(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
WO2002US28982 |
申请日期 |
2002.09.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHRISTIAN, CRAIG, WILLIAM;STICE, JAMES, CLAYTON |
分类号 |
H01L21/66;H01L21/768;H01L23/532;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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