发明名称 ADVANCED PROCESS CONTROL (APC) OF COPPER THICKNESS FOR CHEMICAL MECHANICAL PLANARIZATION(CMP) OPTIMIZATION
摘要 A method is provided that comprises forming a copper seed layer (335) on a workpiece (300) and measuring the uniformity of the copper seed layer (335) on the workpiece (300). The method further comprises applying the uniformity measurement to modify processing to form a copper layer (425) having a desired uniformity profile for increased planarization in subsequent planarizing.
申请公布号 WO03060990(A1) 申请公布日期 2003.07.24
申请号 WO2002US28982 申请日期 2002.09.12
申请人 ADVANCED MICRO DEVICES, INC. 发明人 CHRISTIAN, CRAIG, WILLIAM;STICE, JAMES, CLAYTON
分类号 H01L21/66;H01L21/768;H01L23/532;(IPC1-7):H01L21/66 主分类号 H01L21/66
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