Body of a semiconductor material with a reduced mean free path length

摘要

A body (1) consisting of a doped semiconductor material with a pn junction (10) and an area (2) of reduced mean free path length (lambdr) for free charge carriers is disclosed. Said area (2) has sections (21, 22) which succeed each other in at least one specified direction (x, y, z) and between which there is at least one region (23), containing a mean free path length (lambd0) for the free charge carriers that is larger in relation to the reduced mean free path length (lambdr).