| 摘要 |
A photoelectric semiconductor light-detection system with programmable dynamic performance includes a semiconductor photocell, preferably a photodiode, by which the impinging light intensity can be converted into a proportional photoelectric current. Thc drain of a first MOS FET of corresponding channel-type operated to saturation is coupled to the semiconductor photocell, e.g., the cathode or anode of the photodiode, and its source is maintained at a constant potential. A second MOS FET applies a predetermined variable charge amount to the gate of the first MOS FET. A capacitor is provided at the gate of the first MOS FET. The difference between the offset current and the photoelectric current can be integrated by an integration device. A third MOS FET can be operated as a switch to read the integration device and to reset it at a given value.
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