Fabrication of semiconductor layers for thin-film semiconductor components, by applying useful layer with semiconductor layers to carrier, applying auxiliary carrier remote from carrier by connecting layer, and stripping away the carrier

摘要

#CMT# #/CMT# Semiconductor layers are fabricated by applying a useful layer containing semiconductor layer(s) to a carrier, applying an auxiliary carrier to the side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and useful layer at a joining temperature, and mechanically stripping away the carrier. #CMT# : #/CMT# Fabrication of semiconductor layers involves applying a useful layer containing semiconductor layer(s) to a carrier (1), applying an auxiliary carrier to the side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and useful layer (2) at a joining temperature, and mechanically stripping away the carrier at temperature greater than or equal to the joining temperature and less than a melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier (3) is stripped away from the carrier. #CMT#USE : #/CMT# For fabricating semiconductor layers for the fabrication of thin-film semiconductor components, e.g. thin-film light emitting diodes. #CMT#ADVANTAGE : #/CMT# Avoids incorrect separation, and reduces a mechanical strain resulting from the connection of the auxiliary carrier to the useful layer. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The figure shows a diagrammatic, sectional view of a composite of carrier, useful layer and an auxiliary carrier. 1 : Carrier 1a : Substrate body 1b : Intermediate layer 1c : Growth layer 2 : Useful layer 3 : Auxiliary carrier 4 : Connecting layer #CMT#ELECTRONICS : #/CMT# Preferred Method: The carrier as a quasi-substrate having substrate body (1a), an intermediate layer (1b), and growth layer (1c) is formed. The useful layer is applied to the growth layer. During stripping, the useful layer and carrier along the intermediate layer are separated. The connecting layer (4) is selected to have a melting point greater than the joining temperature. The auxiliary carrier is applied to the useful layer using a diffusion bonding or isothermal solidification. The useful layer is grown on the carrier. #CMT#INORGANIC CHEMISTRY : #/CMT# Preferred Component: One of the useful layer and semiconductor layer is formed from a nitride compound semiconductor comprising nitride compound of elements of the third and/or fifth main group. The carrier is formed from silicon carbide. At least one of growth layer and substrate body is formed from silicon, silicon oxide, or silicon carbide. The intermediate layer is formed from silicon oxide. The connecting layer is formed from palladium-indium, gold silicide, lead silicide, or platinum silicide. The auxiliary carrier is formed from silicon or molybdenum. The connecting layer is formed from a metallic material. The nitride compound semiconductor is gallium nitride, aluminum gallium nitride, indium gallium nitride, aluminum indium gallium nitride, aluminum nitride, or indium nitride.