发明名称 Wiring structure and manufacturing method therefor, semiconductor device including wiring structure and wiring board
摘要 A wiring structure including a transmission line structure capable of simplifying a manufacturing process is obtained. This wiring structure comprises a first trench formed on a first insulator film provided on a substrate, a first wire formed in the extensional direction of the first trench along at least part of the inner surface of the first trench and a second wire formed to be opposed to the first wire through a second insulator film for forming a transmission line for transmitting signals with the first wire. The first wire, the second insulator film and the second wire are embedded in the first trench. This wiring structure is manufactured through a single lithography step, a single etching step and a single resist removing step for forming the first trench and a single CMP step, whereby the manufacturing process is simplified.
申请公布号 US2003137053(A1) 申请公布日期 2003.07.24
申请号 US20030337829 申请日期 2003.01.08
申请人 SANYO ELECTRIC CO., LTD. 发明人 OKAYAMA YOSHIO
分类号 C25D7/12;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L23/48 主分类号 C25D7/12
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