| 摘要 |
<p>A method for forming a silicon film to which impurities are added by a low-pressure CVD apparatus while suppressing diffusion of impurities from a similar silicon film formed on the inner wall of the processing chamber. In this method, a semiconductor substrate on which, for example, a gate oxide film (insulating film) is formed is loaded in a processing chamber of a CVD apparatus (first film forming apparatus), the inside of the processing chamber is so heated that the time B required to heat the processing chamber under the condition that the inside of the processing chamber is evacuated to vacuum or to a pressure below the atmospheric pressure is decreased wherever possible with respect to the time A required to heat the processing chamber under the atmospheric pressure, and thereafter formation of a silicon film to which impurities are added is started. The relation between the times A, B is 0.1 × B ≤ A ≤ 13 × B.</p> |
