| 发明名称 |
Light-emitting semiconductor device producing red wavelength optical radiation |
| 摘要 |
A light-emitting semiconductor device for producing red color optical radiation has a cladding layer of AlGaInPAs having a lattice constant between GaAs and GaP. Further, the laser diode uses an optical waveguide layer in the system of GaInPAs free from Al. The semiconductor device may be constructed on a GaPAs substrate.
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| 申请公布号 |
US2003138015(A1) |
申请公布日期 |
2003.07.24 |
| 申请号 |
US20030357172 |
申请日期 |
2003.02.03 |
| 申请人 |
SATO SHUNICHI;TAKAHASHI TAKASHI;JIKUTANI NAOTO |
发明人 |
SATO SHUNICHI;TAKAHASHI TAKASHI;JIKUTANI NAOTO |
| 分类号 |
H01S5/02;H01S5/20;H01S5/223;H01S5/34;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/02 |
| 代理机构 |
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