发明名称 |
Process and apparatus for removal of photoresist from semiconductor wafers |
摘要 |
A process for removing photoresist from semiconductor wafers is disclosed wherein pressure in excess of one atmosphere is applied to ozone, followed by a mixing of the ozone with deionized water via a series of nozzles, and finally where the semiconductor wafers having at least one layer of photoresist are exposed to the mixture of ozone and deionized water. The temperature during the process is maintained at above ambient temperatures of 20-21° C. or 70° F. An apparatus for the removal of photoresist from semiconductor wafers wherein the apparatus is comprised of a tank capable of holding semiconductor wafers, a series of nozzles, a source of ozone connected to the tank, a source of deionized water connected to the tank; and finally a means for recirculating the deionized water connected to the tank
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申请公布号 |
US2003139057(A1) |
申请公布日期 |
2003.07.24 |
申请号 |
US20020053371 |
申请日期 |
2002.01.18 |
申请人 |
NOVAK RICHARD;CHEN GIM-SYANG;NEMETH DENNIS;KASHKOUSH ISMAIL |
发明人 |
NOVAK RICHARD;CHEN GIM-SYANG;NEMETH DENNIS;KASHKOUSH ISMAIL |
分类号 |
G03F7/42;(IPC1-7):C23F1/00;H01L21/302;H01L21/306;H01L21/461 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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