METHOD FOR FABRICATING INFRARED BOLOMETER

摘要

PURPOSE: A method for fabricating an infrared bolometer is provided to improve infrared absorption efficiency by forming a metal layer made of zirconium on a silicon oxide layer formed over an absorption level. CONSTITUTION: A supporting level structure includes a lower conductive line(124) connected to a corresponding connection terminal while the first sacrificial layer is interposed between a driving substrate and the supporting level structure. The second sacrificial layer is formed to fill the supporting level structure. A part of the second sacrificial layer is selectively eliminated to form a post formation hole exposing a part of the upper portion of the lower conductive line. A supporting layer(122) is formed on the entire region except the upper portion of the exposed lower conductive line. An upper conductive line(144) connected to the exposed lower conductive line is formed on the upper supporting bridge material. A silicon oxide layer(146) is formed on the entire front surface of the upper conductive line. The metal layer(148) made of zirconium is formed on the entire front surface of the silicon oxide layer. A part of the metal layer, the silicon oxide layer and the supporting layer is partially removed to expose a part of the upper portion of the second sacrificial layer so that a post of a cell unit and a detection level structure are formed. The first and second sacrificial layers are eliminated to form a bolometer structure on each cell unit.