Method for manufacturing a semiconductor device having a metal-insulator-metal capacitor and a damascene wiring layer structure

摘要

A method for manufacturing a semiconductor device having a metal-insulator-metal (MIM) capacitor and a damascene wiring layer structure, wherein first and second metal wiring layers are formed in a lower dielectric layer on a semiconductor substrate such that top surfaces of the first and second metal wiring layers and the lower dielectric layer are level. First and second dielectric layers are sequentially formed to have a hole exposing the top surface of the second metal wiring layer. An upper electrode of a capacitor is formed in the hole region such that the top surfaces of the upper electrode and the second dielectric layer are level. Third and fourth dielectric layers are sequentially formed on the substrate. A damascene structure is formed to contact the top surface of the first metal wiring layer, and a contact plug is formed to contact the top surface of the upper electrode.