发明名称 |
Methods to form reduced dimension bit-line isolation in the manufacture of non-volatile memory devices |
摘要 |
A method of manufacturing a semiconductor device with a reduced bit-line isolation dimension. After a layer of image sensitive photoresist is patterned and developed with openings having the minimum printable dimension, the layer of photoresist is silylated causing the layer of photoresist to swell, which causes the opening dimension to decrease.
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申请公布号 |
US6596591(B1) |
申请公布日期 |
2003.07.22 |
申请号 |
US20000739733 |
申请日期 |
2000.12.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU ALLEN S.;HO CHAU M.;STEFFAN PAUL J. |
分类号 |
H01L21/027;H01L21/3213;H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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