| 摘要 |
Metal/metal contacts are formed as part of a multilayer metallization in an integrated circuit on a semiconductor wafer. The application of an insulation layer on a metal level is followed by a lithography step using a photoresist mask to define contact holes on the insulation layer, followed by anisotropic etching of the insulation layer in order to produce the contact holes. Then, a chemical dry etch that removes the photoresist mask and a chemical-physical dry etch that removes organic impurities which accumulate during the chemical dry etch are successively carried out in a vacuum. Subsequently, a metal deposition step is carried out in order to fill the contact holes.
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