| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having conductive plugs connecting capacitors with a conductive pattern in which the yield of the contact plugs can be enhanced directly under the lower electrode of the capacitor and design of the contact plugs can be facilitated at other parts. SOLUTION: The semiconductor device comprises first and second impurity diffusion regions 5a and 5b formed on a semiconductor substrate 1, a first insulation film 8 formed above the semiconductor substrate 1, a first hole 9a made through the first insulation film 8 above the first impurity diffusion region 5a, a first conductive plug 10a of a metal film formed in the first hole 9a, a second hole 9b made through the first insulation film 8 above the second impurity diffusion region 5b, a second conductive plug 10b of a conductive material more oxidation retardant than the metal film formed in the second hole 9b, and a capacitor Q<SB>1</SB>consisting of a lower electrode 13a being connected with the upper surface of the second conductive plug 10b, a dielectric film 14a and an upper electrode 15a. COPYRIGHT: (C)2003,JPO
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