发明名称 SEMICONDUCTOR LASER APPARATUS
摘要 PROBLEM TO BE SOLVED: To increase light-output by making a cross sectional area of its optical waveguide larger in a semiconductor laser apparatus, while allowing to operate stably at lateral mode. SOLUTION: It provides a gain portion 10 provided with the optical waveguide including a semiconductor layer 3 with gain to lighting, and a mirror portion 20 for comprising a mirror of one of Fabry-Perot resonators, placed adjacent or cross to a light emitting end surface of the optical waveguide. This mirror portion 20 is to include higher reflectance than that of the light emitting end surface, in a smaller range than width of the optical waveguide opposed, and high reflectance area 22 which is higher reflectance than that of outside of the range. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003204109(A) 申请公布日期 2003.07.18
申请号 JP20020000574 申请日期 2002.01.07
申请人 FUJI PHOTO FILM CO LTD 发明人 MATSUMOTO KENJI
分类号 H01S5/028;H01S5/065;(IPC1-7):H01S5/028 主分类号 H01S5/028
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