发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device to function as neuron element, potential generator and logic conversion circuit or the like. <P>SOLUTION: In the potential generator, the source of an N-type MIS transistor 54 and the source of a P-type MIS transistor 56 are connected to each other and connected to an output terminal 55. The drain of the N-type MIS transistor 54 is connected to a power supply voltage feeding part 53 for feeding a power supply voltage VDD and the drain of the P-type MIS transistor 56 is connected to a ground 57 for supplying a ground voltage VSS. Besides, the substrate potential of the N-type MIS transistor 54 is the ground voltage VSS and the substrate potential of the P-type MIS transistor 56 is the power supply voltage VDD. Thus, the semiconductor device is configured as a source follower circuit for taking output out of the sources. By utilizing such a potential generator, the logic conversion circuit is provided for stably switching NOR operation and NAND operation. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003204257(A) 申请公布日期 2003.07.18
申请号 JP20020156203 申请日期 2002.05.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UEDA MICHIHITO;TOYODA KENJI;MORITA KIYOYUKI;OTSUKA TAKASHI
分类号 G11C11/22;G11C11/54;H01L21/8238;H01L21/8246;H01L21/8247;H01L27/092;H01L27/105;H01L29/78;H01L29/788;H01L29/792;H03K19/00;H03K19/094;H03K19/0952 主分类号 G11C11/22
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