发明名称 METHOD FOR MANUFACTURING SILICON WAFER
摘要 <P>PROBLEM TO BE SOLVED: To give evenness with high accuracy and a small surface roughness on both surfaces of a wafer, and to visually distinguish the front and rear surfaces of a wafer. <P>SOLUTION: An improved method for manufacturing a wafer contains a slice step 10 of slicing a single-crystal ingot to obtain a thin disk-like wafer; a chamfering step 11 for chamfering the wafer; a lapping step of a levelling the wafer; an etching step 13 for removing a process distortion on a surface of the wafer; a surface-polishing step 16 for mirror-polishing one surface of the wafer; and a cleaning step 17 for cleaning the wafer. With this characteristic constitution, the etching step contains a first etching step 13a of acid-etching the wafer and a second etching step 13b for alkali-etching the wafer, after the first etching step. A backlight polishing step 14 for polishing a part of unevenness on the back of the wafer, formed by the etching step, is included between the etching step and the surface mirror-polishing step. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003203890(A) 申请公布日期 2003.07.18
申请号 JP20020000553 申请日期 2002.01.07
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 NORIMOTO MASAFUMI;TAKAISHI KAZUNARI
分类号 B24B37/04;H01L21/304 主分类号 B24B37/04
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