发明名称 LOW VOLTAGE DETECTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a low voltage detector which can detect accurate low voltage since it is not affected by change in the temperature, process, and operation voltage. <P>SOLUTION: The detector comprises a first flash memory cell driven by a ground voltage for maintaining the potential of a first node to a prescribed potential, a second flash memory cell driven by a power source voltage for controlling the potential of a second node, and a comparator for comparing the potential of the first node with the potential of the second node. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003203492(A) 申请公布日期 2003.07.18
申请号 JP20020352578 申请日期 2002.12.04
申请人 HYNIX SEMICONDUCTOR INC 发明人 O SE EUN
分类号 G11C16/06;G11C5/14;G11C16/30;H03K5/08;H03K19/00;(IPC1-7):G11C16/06 主分类号 G11C16/06
代理机构 代理人
主权项
地址