| 摘要 |
<P>PROBLEM TO BE SOLVED: To constitute a nitride semiconductor element in which an active layer having an In-containing nitride semiconductor is sandwiched between p- and n-type clad layers and which emits light having a wavelength of, particularly, ≥440 nm in a structure in which the threshold current is reduced. <P>SOLUTION: The nitride semiconductor element is constituted in an asymmetrical waveguide structure by respectively interposing a first nitride semiconductor layer 31 composed of the In-containing nitride semiconductor, and a second nitride semiconductor layer 32 composed of a nitride semiconductor containing no In between the active layer 12 and n- and p-type clad layers 25 and 30. Consequently, the deterioration of crystallinity caused by the In-containing nitride semiconductor provided on a p-type layer 13 side and the light loss caused by In can be avoided by means of the second nitride semiconductor layer 32, and the density of the threshold current is lowered by increasing the refractive index in the waveguide by means of the first nitride semiconductor layer 31. <P>COPYRIGHT: (C)2003,JPO |
